? semiconductor components industries, llc, 2002 april, 2002 rev. 2 1 publication order number: msqa6v1w5t2/d msqa6v1w5t2 quad array for esd protection this quad monolithic silicon voltage suppressor is designed for applications requiring transient overvoltage protection capability. it is intended for use in voltage and esd sensitive equipment such as computers, printers, business machines, communication systems, medical equipment, and other applications. its quad junction common anode design protects four separate lines using only one package. these devices are ideal for situations where board space is at a premium. specification features ? sc88a package allows four separate unidirectional configurations ? low leakage < 1 a @ 3 volt ? breakdown voltage: 6.1 volt 7.2 volt @ 1 ma ? low capacitance (90 pf typical) ? esd protection meeting iec100042 mechanical characteristics ? void free, transfermolded, thermosetting plastic case ? corrosion resistant finish, easily solderable ? package designed for optimal automated board assembly ? small package size for high density applications sc88a/sot323 case 419a 5 4 1 2 3 device package shipping ordering information msqa6v1w5t2 sc88a 3000/tape & reel 61 = device marking d = one digit date code 61 d marking diagram 13 2 45 note: t2 suffix devices are packaged with pin 1 note: opposing sprocket hole. http://onsemi.com
msqa6v1w5t2 http://onsemi.com 2 maximum ratings (t a = 25 c unless otherwise noted) characteristic symbol value unit peak power dissipation @ 20 s @t a 25 c (note 1) p pk 150 w steady state power 1 diode (note 2) p d 385 mw thermal resistance junction to ambient above 25 c, derate r ja 325 3.1 c/w mw/ c maximum junction temperature t jmax 150 c operating junction and storage temperature range t j t stg 55 to +150 c esd discharge mil std 883c method 30156 iec100042, air discharge iec100042, contact discharge v pp 16 16 9 kv lead solder temperature (10 seconds duration) t l 260 c electrical characteristics breakdown voltage v br @ 1 ma (volts) leakage current i rm @v rwm =3v capacitance @ 0 v bias max v f @i f = 200 ma device min nom max i rm @ v rwm = 3 v ( a) @ 0 v bi as (pf) v f @ i f = 200 m a (v) msqa6v1w5 6.1 6.6 7.2 1.0 90 1.25 1. nonrepetitive current per figure 1. derate per figure 2. 2. only 1 diode under power. for all 4 diodes under power, p d will be 25%. mounted on fr4 board with min pad. figure 1. pulse width figure 2. 8 20 s pulse waveform p 100 10 1 1 10 100 1000 t, time ( s) 1000 , peak surge power (watts) pk note: nonrepetitive surge. 100 90 80 70 60 50 40 30 20 10 0 020406080 t, time ( s) % of peak pulse current t p t r pulse width (t p ) is defined as that point where the peak current decay = 8 s peak value i rsm @ 8 s half value i rsm /2 @ 20 s
msqa6v1w5t2 http://onsemi.com 3 figure 3. pulse derating curve figure 4. capacitance figure 5. forward voltage figure 6. clamping voltage versus peak pulse current (reverse direction) 0.6 0.7 0.8 0.9 0.001 0.01 1.0 v f , forward voltage (volts) 100 90 80 70 60 50 40 30 20 10 0 0 1.0 3.0 5.0 bias voltage (volts) typical capacitance (pf) 100 10 1.0 0 5.0 10 20 30 v c , clamping voltage (volts) i 25 , peak pulse current (amps) pp 4.0 2.0 1 mhz frequency 1.0 1.1 1.2 0.1 i , forward current (a) f 15 2.5 s square wave 100 90 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 200 t a , ambient temperature ( c) or current @ t a = 25 c figure 7. clamping voltage versus peak pulse current (forward direction) 100 10 0.1 0 2.0 4.0 8.0 12 v c , forward clamping voltage (volts) i 10 , peak forward pulse current (amps) pp 6.0 2.5 s square wave 1.0
msqa6v1w5t2 http://onsemi.com 4 package dimensions sc88a/sot323 5lead package case 419a02 issue f notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 419a-01 obsolete. new standard 419a-02. dim a min max min max millimeters 1.80 2.20 0.071 0.087 inches b 1.15 1.35 0.045 0.053 c 0.80 1.10 0.031 0.043 d 0.10 0.30 0.004 0.012 g 0.65 bsc 0.026 bsc h --- 0.10 --- 0.004 j 0.10 0.25 0.004 0.010 k 0.10 0.30 0.004 0.012 n 0.20 ref 0.008 ref s 2.00 2.20 0.079 0.087 b 0.2 (0.008) mm 12 3 4 5 a g s d 5 pl h c n j k b on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indem nify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and re asonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employ er. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. msqa6v1w5t2/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada
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